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  5. TP65H050WS
TP65H050WS
TP65H050WS
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TP65H050WS
TP65H050WS
Transphorm
GANFET N-CH 650V 34A TO247-3
Transistors - FETs, MOSFETs - Single
TP65H050WS.pdf
10,030
10,030 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Base Product Number
TP65H050
Drain to Source Voltage (Vdss)
650 V
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
4.8V @ 700µA
Power Dissipation (Max)
119W (Tc)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Package / Case
TO-247-3
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Supplier Device Package
TO-247-3
Product Status
Active
Mfr
Transphorm
Technology
GaNFET (Cascode Gallium Nitride FET)
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
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