TK12A80WS4X|Toshiba Semiconductor and Storage|Transistors - FETs, MOSFETs - Single

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TK12A80WS4X

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TK12A80WS4X

Part Number TK12A80WS4X

Manufacturer Toshiba Semiconductor and Storage

Describe MOSFET N-CH 800V 11.5A TO220SIS

Classification: Transistors - FETs, MOSFETs - Single

Datasheet TK12A80W-S4X.pdf

Stock 871

Customer Reference

871 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Drain to Source Voltage (Vdss)

800 V

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Type

N-Channel

Vgs (Max)

±20V

Base Product Number

TK12A80

Series

DTMOSIV

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta)

Package

Tube

Vgs(th) (Max) @ Id

4V @ 570µA

Power Dissipation (Max)

45W (Tc)

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 300 V

Operating Temperature

150°C

Product Status

Active

Gate Charge (Qg) (Max) @ Vgs

23 nC @ 10 V

Mounting Type

Through Hole

Mfr

Toshiba Semiconductor and Storage

FET Feature

-

Supplier Device Package

TO-220SIS

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

450mOhm @ 5.8A, 10V

Package / Case

TO-220-3 Full Pack

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