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STU3N65M6
STU3N65M6
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STU3N65M6
STU3N65M6
STMicroelectronics
MOSFET N-CH 650V 3.5A IPAK
Transistors - FETs, MOSFETs - Single
3,036
3,036 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
45W (Tc)
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
3.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
3.5A (Tc)
Series
MDmesh™ M6
Mounting Type
Through Hole
Mfr
STMicroelectronics
Package
Tube
Vgs (Max)
±25V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
STU3N65
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.75A, 10V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 100 V
Supplier Device Package
I-PAK
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