SSM6K217FELFTR|Toshiba Semiconductor and Storage|Transistors - FETs, MOSFETs - Single

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SSM6K217FELFTR

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SSM6K217FELFTR

Part Number SSM6K217FELFTR

Manufacturer Toshiba Semiconductor and Storage

Describe MOSFET N-CH 40V 1.8A ES6

Classification: Transistors - FETs, MOSFETs - Single

Datasheet SSM6K217FE-LF.pdf

Stock 3,053

Customer Reference

3,053 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Rds On (Max) @ Id, Vgs

195mOhm @ 1A, 8V

Vgs (Max)

±12V

Technology

MOSFET (Metal Oxide)

Power Dissipation (Max)

500mW (Ta)

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Vgs(th) (Max) @ Id

1.2V @ 1mA

FET Feature

-

Drain to Source Voltage (Vdss)

40 V

Product Status

Active

Input Capacitance (Ciss) (Max) @ Vds

130 pF @ 10 V

Package / Case

SOT-563, SOT-666

Mfr

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

Package

Tape & Reel (TR)^^Cut Tape (CT)^^Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1.1 nC @ 4.2 V

Operating Temperature

150°C (TJ)

FET Type

N-Channel

Mounting Type

Surface Mount

Base Product Number

SSM6K217

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Supplier Device Package

ES6

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