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  5. SPB80N10L
SPB80N10L
SPB80N10L
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SPB80N10L
SPB80N10L
Infineon Technologies
MOSFET N-CH 100V 80A TO263-3
Transistors - FETs, MOSFETs - Single
SP(I,B,P)80N10L.pdf
3,022
3,022 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)
Power Dissipation (Max)
250W (Tc)
Product Status
Obsolete
Mounting Type
Surface Mount
Series
SIPMOS®
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
SPB80N
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
FET Feature
-
Rds On (Max) @ Id, Vgs
14mOhm @ 58A, 10V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds
4540 pF @ 25 V
Supplier Device Package
PG-TO263-3-2
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