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SPB35N10G
SPB35N10G
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SPB35N10G
SPB35N10G
Infineon Technologies
MOSFET N-CH 100V 35A TO263-3
Transistors - FETs, MOSFETs - Single
SP(I,P,B)35N10.pdf
10,079
10,079 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
44mOhm @ 26.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Power Dissipation (Max)
150W (Tc)
Supplier Device Package
PG-TO263-3-2
Base Product Number
SPB35N
Package
Tape & Reel (TR)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 83µA
Mfr
Infineon Technologies
Series
SIPMOS®
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
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