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R6012FNX
R6012FNX
R6012FNX
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R6012FNX
R6012FNX
Rohm Semiconductor
MOSFET N-CH 600V 12A TO220FM
Transistors - FETs, MOSFETs - Single
r6012fnx.pdf
10,089
10,089 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Supplier Device Package
TO-220FM
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
FET Type
N-Channel
Product Status
Active
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
5V @ 1mA
Operating Temperature
150°C (TJ)
Series
-
Mfr
Rohm Semiconductor
Package
Bulk
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Rds On (Max) @ Id, Vgs
510mOhm @ 6A, 10V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Base Product Number
R6012
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