IXTY1R4N100P|IXYS|Transistors - FETs, MOSFETs - Single

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IXTY1R4N100P

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IXTY1R4N100P

Part Number IXTY1R4N100P

Manufacturer IXYS

Describe MOSFET N-CH 1000V 1.4A TO252

Classification: Transistors - FETs, MOSFETs - Single

Datasheet littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf

Stock 3,053

Customer Reference

3,053 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Operating Temperature

-55°C ~ 150°C (TJ)

Base Product Number

IXTY1

Product Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Type

N-Channel

Drain to Source Voltage (Vdss)

1000 V

Rds On (Max) @ Id, Vgs

11Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Mfr

IXYS

Technology

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs

17.8 nC @ 10 V

FET Feature

-

Vgs (Max)

±20V

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package

Tube

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Power Dissipation (Max)

63W (Tc)

Series

Polar

Input Capacitance (Ciss) (Max) @ Vds

450 pF @ 25 V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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