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  5. IXTQ22N50P
IXTQ22N50P
IXTQ22N50P
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IXTQ22N50P
IXTQ22N50P
IXYS
MOSFET N-CH 500V 22A TO3P
Transistors - FETs, MOSFETs - Single
99351.pdf
3,006
3,006 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2630 pF @ 25 V
Product Status
Active
Drain to Source Voltage (Vdss)
500 V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
Polar
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Vgs (Max)
±30V
Power Dissipation (Max)
350W (Tc)
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ22
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Mfr
IXYS
Package
Tube
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