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IXTP8N50PM
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IXTP8N50PM
IXTP8N50PM
IXYS
MOSFET N-CH 500V 4A TO220AB
Transistors - FETs, MOSFETs - Single
99582.pdf
3,023
3,023 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Supplier Device Package
TO-220-3
Series
PolarHV™
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Rds On (Max) @ Id, Vgs
800mOhm @ 4A, 10V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Vgs(th) (Max) @ Id
5.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±30V
Package / Case
TO-220-3
FET Type
N-Channel
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
Mfr
IXYS
Product Status
Obsolete
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
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