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  5. IXTP2R4N120P
IXTP2R4N120P
IXTP2R4N120P
Favorite Products
IXTP2R4N120P
IXTP2R4N120P
IXYS
MOSFET N-CH 1200V 2.4A TO220AB
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
3,062
3,062 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Drain to Source Voltage (Vdss)
1200 V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Mounting Type
Through Hole
Series
Polar
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1207 pF @ 25 V
Mfr
IXYS
Vgs(th) (Max) @ Id
4.5V @ 250µA
Technology
MOSFET (Metal Oxide)
FET Feature
-
Base Product Number
IXTP2
Package
Tube
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
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