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  5. IXTH10P50
IXTH10P50
IXTH10P50
IXTH10P50
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IXTH10P50
IXTH10P50
IXYS
MOSFET P-CH 500V 10A TO247
Transistors - FETs, MOSFETs - Single
IXTH10P50.pdf
3,085
3,085 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mfr
IXYS
Power Dissipation (Max)
300W (Tc)
Package
Tube
Product Status
Obsolete
FET Feature
-
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
500 V
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
900mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Vgs(th) (Max) @ Id
5V @ 250µA
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