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  5. IXTA2N100P
IXTA2N100P
IXTA2N100P
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IXTA2N100P
IXTA2N100P
IXYS
MOSFET N-CH 1000V 2A TO263
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf
10,010
10,010 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Mfr
IXYS
Vgs(th) (Max) @ Id
4.5V @ 100µA
Mounting Type
Surface Mount
Package
Tube
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Base Product Number
IXTA2
Series
Polar
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs
24.3 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 25 V
Product Status
Active
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