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  5. IXFT4N100Q
IXFT4N100Q
IXFT4N100Q
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IXFT4N100Q
IXFT4N100Q
IXYS
MOSFET N-CH 1000V 4A TO268
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n100q_datasheet.pdf.pdf
851
851 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
1000 V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
3Ohm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Product Status
Obsolete
Package
Tube
FET Type
N-Channel
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Series
HiPerFET™
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Vgs(th) (Max) @ Id
5V @ 1.5mA
Mfr
IXYS
Supplier Device Package
TO-268AA
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