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  5. IXFT18N100Q3
IXFT18N100Q3
IXFT18N100Q3
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IXFT18N100Q3
IXFT18N100Q3
IXYS
MOSFET N-CH 1000V 18A TO268
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n100q3_datasheet.pdf.pdf
3,093
3,093 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mfr
IXYS
Technology
MOSFET (Metal Oxide)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs
660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
6.5V @ 4mA
FET Feature
-
Mounting Type
Surface Mount
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4890 pF @ 25 V
Power Dissipation (Max)
830W (Tc)
Supplier Device Package
TO-268AA
Series
HiPerFET™, Q3 Class
FET Type
N-Channel
Vgs (Max)
±30V
Base Product Number
IXFT18
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