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  5. IXFT14N100
IXFT14N100
IXFT14N100
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IXFT14N100
IXFT14N100
IXYS
MOSFET N-CH 1000V 14A TO268
Transistors - FETs, MOSFETs - Single
IXFT14N100.pdf
10,009
10,009 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4.5V @ 4mA
Series
HiPerFET™
Mfr
IXYS
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
750mOhm @ 500mA, 10V
Mounting Type
Surface Mount
Package
Tube
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
360W (Tc)
Drain to Source Voltage (Vdss)
1000 V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
Vgs (Max)
±20V
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Supplier Device Package
TO-268AA
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