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IXFN60N60
IXFN60N60
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IXFN60N60
IXFN60N60
IXYS
MOSFET N-CH 600V 60A SOT-227B
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn60n60_datasheet.pdf.pdf
3,015
3,015 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
75mOhm @ 500mA, 10V
Vgs (Max)
±20V
Mfr
IXYS
FET Type
N-Channel
Power Dissipation (Max)
700W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
Package / Case
SOT-227-4, miniBLOC
Series
HiPerFET™
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Chassis Mount
Product Status
Obsolete
Vgs(th) (Max) @ Id
4.5V @ 8mA
FET Feature
-
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