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  5. IXFN32N100Q3
IXFN32N100Q3
IXFN32N100Q3
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IXFN32N100Q3
IXFN32N100Q3
IXYS
MOSFET N-CH 1000V 28A SOT227B
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n100q3_datasheet.pdf.pdf
10,090
10,090 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mfr
IXYS
Input Capacitance (Ciss) (Max) @ Vds
9940 pF @ 25 V
Base Product Number
IXFN32
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
780W (Tc)
Package
Tube
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Drain to Source Voltage (Vdss)
1000 V
Vgs (Max)
±30V
FET Feature
-
Product Status
Active
Rds On (Max) @ Id, Vgs
320mOhm @ 16A, 10V
Series
HiPerFET™, Q3 Class
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
SOT-227-4, miniBLOC
Vgs(th) (Max) @ Id
6.5V @ 8mA
Operating Temperature
-55°C ~ 150°C (TJ)
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