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  5. IXFK26N90
IXFK26N90
IXFK26N90
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IXFK26N90
IXFK26N90
IXYS
MOSFET N-CH 900V 26A TO-264
Transistors - FETs, MOSFETs - Single
littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n90_datasheet.pdf.pdf
3,013
3,013 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
Rds On (Max) @ Id, Vgs
300mOhm @ 13A, 10V
Package / Case
TO-264-3, TO-264AA
Vgs (Max)
±20V
Power Dissipation (Max)
560W (Tc)
FET Feature
-
FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Vgs(th) (Max) @ Id
5V @ 8mA
Mounting Type
Through Hole
Product Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
10800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Supplier Device Package
TO-264AA (IXFK)
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
IXYS
Series
HiPerFET™
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