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IRLZ34NL
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IRLZ34NL
IRLZ34NL
Infineon Technologies
MOSFET N-CH 55V 30A TO262
Transistors - FETs, MOSFETs - Single
irlz34nspbf.pdf
3,046
3,046 In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
35mOhm @ 16A, 10V
Mfr
Infineon Technologies
FET Feature
-
Drain to Source Voltage (Vdss)
55 V
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 5 V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-262
Product Status
Obsolete
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Series
HEXFET®
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Vgs (Max)
±16V
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type
Through Hole
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