IRLR3717PBF|Infineon Technologies|Transistors - FETs, MOSFETs - Single

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IRLR3717PBF

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IRLR3717PBF

Part Number IRLR3717PBF

Manufacturer Infineon Technologies

Describe MOSFET N-CH 20V 120A DPAK

Classification: Transistors - FETs, MOSFETs - Single

Datasheet IRLR3717PbF,IRLU3717PbF.pdf

Stock 3,055

Customer Reference

3,055 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Supplier Device Package

D-Pak

Mfr

Infineon Technologies

Package

Tube

Product Status

Discontinued at Digi-Key

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

4mOhm @ 15A, 10V

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

2.45V @ 250µA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2830 pF @ 10 V

Power Dissipation (Max)

89W (Tc)

Drain to Source Voltage (Vdss)

20 V

FET Feature

-

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Series

HEXFET®

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 4.5 V

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