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Infineon Technologies
MOSFET N-CH 30V 4.6A SOT223
Transistors - FETs, MOSFETs - Single

10,040
10,040 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Type
N-Channel
Power Dissipation (Max)
1W (Ta)
Mfr
Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Product Status
Obsolete
Package / Case
TO-261-4, TO-261AA
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Vgs (Max)
±16V
Series
HEXFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)^^Digi-Reel®
Rds On (Max) @ Id, Vgs
31mOhm @ 4.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 25 V
Supplier Device Package
SOT-223
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta)
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
FET Feature
-
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