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IRLL014NPBF
IRLL014NPBF
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IRLL014NPBF
IRLL014NPBF
Infineon Technologies
MOSFET N-CH 55V 2A SOT223
Transistors - FETs, MOSFETs - Single
irll014npbf.pdf
3,042
3,042 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
FET Feature
-
Drain to Source Voltage (Vdss)
55 V
Power Dissipation (Max)
1W (Ta)
Package / Case
TO-261-4, TO-261AA
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
140mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Supplier Device Package
SOT-223
Product Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 150°C (TJ)
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