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IRFU540ZPBF
IRFU540ZPBF
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IRFU540ZPBF
IRFU540ZPBF
Infineon Technologies
MOSFET N-CH 100V 35A IPAK
Transistors - FETs, MOSFETs - Single
irfr540zpbf.pdf
10,100
10,100 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
28.5mOhm @ 21A, 10V
Package
Tube
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
91W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V
FET Feature
-
Product Status
Obsolete
Vgs (Max)
±20V
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ Id
4V @ 50µA
Supplier Device Package
IPAK (TO-251AA)
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
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