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IRFU1010Z
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IRFU1010Z
IRFU1010Z
Infineon Technologies
MOSFET N-CH 55V 42A IPAK
Transistors - FETs, MOSFETs - Single
irfr1010zpbf.pdf
3,046
3,046 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
55 V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Technology
MOSFET (Metal Oxide)
Supplier Device Package
IPAK (TO-251AA)
Package
Tube
Rds On (Max) @ Id, Vgs
7.5mOhm @ 42A, 10V
FET Feature
-
Mounting Type
Through Hole
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
2840 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Mfr
Infineon Technologies
Series
HEXFET®
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