IRFR3711PBF|Infineon Technologies|Transistors - FETs, MOSFETs - Single

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IRFR3711PBF

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IRFR3711PBF

Part Number IRFR3711PBF

Manufacturer Infineon Technologies

Describe MOSFET N-CH 20V 100A DPAK

Classification: Transistors - FETs, MOSFETs - Single

Datasheet irfr3711pbf.pdf

Stock 10,010

Customer Reference

10,010 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Product Status

Obsolete

Vgs (Max)

±20V

Package

Tube

Drain to Source Voltage (Vdss)

20 V

Gate Charge (Qg) (Max) @ Vgs

44 nC @ 4.5 V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds

2980 pF @ 10 V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 120W (Tc)

Mfr

Infineon Technologies

Vgs(th) (Max) @ Id

3V @ 250µA

Series

HEXFET®

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 15A, 10V

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

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