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  5. IRFD010PBF
IRFD010PBF
IRFD010PBF
IRFD010PBF
IRFD010PBF
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IRFD010PBF
IRFD010PBF
Vishay Siliconix
MOSFET N-CH 50V 1.7A 4DIP
Transistors - FETs, MOSFETs - Single
IRFD010,-012.pdf
3,006
3,006 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
200mOhm @ 860mA, 10V
Power Dissipation (Max)
1W (Tc)
FET Feature
-
Base Product Number
IRFD010
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Mounting Type
Through Hole
Package
Bulk
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
Package / Case
4-DIP (0.300", 7.62mm)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Mfr
Vishay Siliconix
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)
10V
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