IRFD010|Vishay Siliconix|Transistors - FETs, MOSFETs - Single

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IRFD010

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IRFD010

Part Number IRFD010

Manufacturer Vishay Siliconix

Describe MOSFET N-CH 50V 1.7A 4DIP

Classification: Transistors - FETs, MOSFETs - Single

Datasheet IRFD010,-012.pdf

Stock 3,093

Customer Reference

3,093 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Mfr

Vishay Siliconix

Gate Charge (Qg) (Max) @ Vgs

13 nC @ 10 V

Product Status

Obsolete

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

10V

Input Capacitance (Ciss) (Max) @ Vds

250 pF @ 25 V

Series

-

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Rds On (Max) @ Id, Vgs

200mOhm @ 860mA, 10V

FET Feature

-

Supplier Device Package

4-HVMDIP

Base Product Number

IRFD010

Package / Case

4-DIP (0.300", 7.62mm)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

4V @ 250µA

Power Dissipation (Max)

1W (Tc)

Package

Tube

Drain to Source Voltage (Vdss)

50 V

Vgs (Max)

±20V

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