IRF8010STRRPBF|Infineon Technologies|Transistors - FETs, MOSFETs - Single

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IRF8010STRRPBF

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IRF8010STRRPBF

Part Number IRF8010STRRPBF

Manufacturer Infineon Technologies

Describe MOSFET N-CH 100V 80A D2PAK

Classification: Transistors - FETs, MOSFETs - Single

Datasheet irf8010spbf.pdf

Stock 3,057

Customer Reference

3,057 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Feature

-

Power Dissipation (Max)

260W (Tc)

Mfr

Infineon Technologies

Drain to Source Voltage (Vdss)

100 V

Input Capacitance (Ciss) (Max) @ Vds

3830 pF @ 25 V

Supplier Device Package

D2PAK

Package

Tape & Reel (TR)

Vgs (Max)

±20V

Product Status

Obsolete

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Gate Charge (Qg) (Max) @ Vgs

120 nC @ 10 V

Mounting Type

Surface Mount

Series

HEXFET®

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

15mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

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