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IRF7842PBF
IRF7842PBF
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IRF7842PBF
IRF7842PBF
Infineon Technologies
MOSFET N-CH 40V 18A 8SO
Transistors - FETs, MOSFETs - Single
irf7842pbf.pdf
821
821 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
2.5W (Ta)
Rds On (Max) @ Id, Vgs
5mOhm @ 17A, 10V
Product Status
Discontinued at Digi-Key
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 20 V
Technology
MOSFET (Metal Oxide)
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Vgs(th) (Max) @ Id
2.25V @ 250µA
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tube
Mounting Type
Surface Mount
Series
HEXFET®
FET Type
N-Channel
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
FET Feature
-
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