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  5. IRF5210LPBF
IRF5210LPBF
IRF5210LPBF
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IRF5210LPBF
IRF5210LPBF
Infineon Technologies
MOSFET P-CH 100V 38A TO262
Transistors - FETs, MOSFETs - Single
irf5210spbf.pdf
3,097
3,097 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HEXFET®
Mounting Type
Through Hole
Supplier Device Package
TO-262
Product Status
Last Time Buy
FET Feature
-
Mfr
Infineon Technologies
FET Type
P-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 38A, 10V
Base Product Number
IRF5210
Power Dissipation (Max)
3.1W (Ta), 170W (Tc)
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