IRF3717PBF|Infineon Technologies|Transistors - FETs, MOSFETs - Single

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IRF3717PBF

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IRF3717PBF

Part Number IRF3717PBF

Manufacturer Infineon Technologies

Describe MOSFET N-CH 20V 20A 8SO

Classification: Transistors - FETs, MOSFETs - Single

Datasheet IRF3717PbF.pdf

Stock 3,043

Customer Reference

3,043 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Mounting Type

Surface Mount

Series

HEXFET®

Package

Tube

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Supplier Device Package

8-SO

Rds On (Max) @ Id, Vgs

4.4mOhm @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Power Dissipation (Max)

2.5W (Ta)

Package / Case

8-SOIC (0.154", 3.90mm Width)

FET Type

N-Channel

Mfr

Infineon Technologies

Gate Charge (Qg) (Max) @ Vgs

33 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds

2890 pF @ 10 V

Operating Temperature

-55°C ~ 150°C (TJ)

FET Feature

-

Product Status

Discontinued at Digi-Key

Vgs(th) (Max) @ Id

2.45V @ 250µA

Vgs (Max)

±20V

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