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  5. IRF3711LPBF
IRF3711LPBF
IRF3711LPBF
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IRF3711LPBF
IRF3711LPBF
Infineon Technologies
MOSFET N-CH 20V 110A TO262
Transistors - FETs, MOSFETs - Single
irf3711pbf.pdf
3,004
3,004 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Package
Tube
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
Supplier Device Package
TO-262
FET Type
N-Channel
Series
HEXFET®
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Through Hole
FET Feature
-
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
Technology
MOSFET (Metal Oxide)
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