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  5. IRF3710STRR
IRF3710STRR
IRF3710STRR
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IRF3710STRR
IRF3710STRR
Infineon Technologies
MOSFET N-CH 100V 57A D2PAK
Transistors - FETs, MOSFETs - Single
irf3710spbf.pdf
10,089
10,089 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
3130 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
23mOhm @ 28A, 10V
Package
Tape & Reel (TR)
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
FET Feature
-
Mfr
Infineon Technologies
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Supplier Device Package
D2PAK
Operating Temperature
-55°C ~ 175°C (TJ)
Series
HEXFET®
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)
200W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
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