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IRF2903ZLPBF
IRF2903ZLPBF
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IRF2903ZLPBF
IRF2903ZLPBF
Infineon Technologies
MOSFET N-CH 30V 75A TO262
Transistors - FETs, MOSFETs - Single
irf2903zspbf.pdf
831
831 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
231W (Tc)
Supplier Device Package
TO-262
Operating Temperature
-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Mfr
Infineon Technologies
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 150µA
Series
HEXFET®
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
2.4mOhm @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds
6320 pF @ 25 V
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