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IRF1018EPBF
IRF1018EPBF
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IRF1018EPBF
IRF1018EPBF
Infineon Technologies
MOSFET N-CH 60V 79A TO220AB
Transistors - FETs, MOSFETs - Single
irf1018epbf.pdf
3,036
3,036 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
HEXFET®
Vgs(th) (Max) @ Id
4V @ 100µA
FET Feature
-
Supplier Device Package
TO-220AB
Mfr
Infineon Technologies
FET Type
N-Channel
Vgs (Max)
±20V
Mounting Type
Through Hole
Base Product Number
IRF1018
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Product Status
Active
Drain to Source Voltage (Vdss)
60 V
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tube
Rds On (Max) @ Id, Vgs
8.4mOhm @ 47A, 10V
Package / Case
TO-220-3
Power Dissipation (Max)
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 50 V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
79A (Tc)
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