IPSH4N03LAG|Infineon Technologies|Transistors - FETs, MOSFETs - Single

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IPSH4N03LAG

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IPSH4N03LAG

Part Number IPSH4N03LAG

Manufacturer Infineon Technologies

Describe MOSFET N-CH 25V 90A TO251-3

Classification: Transistors - FETs, MOSFETs - Single

Datasheet IP(D,S)H4N03LA_G.pdf

Stock 3,063

Customer Reference

3,063 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Technology

MOSFET (Metal Oxide)

Package

Tube

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Product Status

Obsolete

Rds On (Max) @ Id, Vgs

4.4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Vgs (Max)

±20V

Supplier Device Package

PG-TO251-3-11

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds

3200 pF @ 15 V

Operating Temperature

-55°C ~ 175°C (TJ)

FET Type

N-Channel

FET Feature

-

Series

OptiMOS™

Mfr

Infineon Technologies

Power Dissipation (Max)

94W (Tc)

Mounting Type

Through Hole

Base Product Number

IPSH4N

Drain to Source Voltage (Vdss)

25 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

TO-251-3 Stub Leads, IPak

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