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  5. IPI65R660CFDXKSA1
IPI65R660CFDXKSA1
IPI65R660CFDXKSA1
IPI65R660CFDXKSA1
IPI65R660CFDXKSA1
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IPI65R660CFDXKSA1
IPI65R660CFDXKSA1
Infineon Technologies
MOSFET N-CH 650V 6A TO262-3
Transistors - FETs, MOSFETs - Single
Infineon-IPX65R660CFD-DS-v02_05-en.pdf
3,083
3,083 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
62.5W (Tc)
FET Type
N-Channel
Series
CoolMOS™
Product Status
Obsolete
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Base Product Number
IPI65R
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
660mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Mfr
Infineon Technologies
Input Capacitance (Ciss) (Max) @ Vds
615 pF @ 100 V
Supplier Device Package
PG-TO262-3
Vgs(th) (Max) @ Id
4.5V @ 200µA
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
10V
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