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  5. IPI26CNE8NG
IPI26CNE8NG
IPI26CNE8NG
IPI26CNE8NG
IPI26CNE8NG
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IPI26CNE8NG
IPI26CNE8NG
Infineon Technologies
MOSFET N-CH 85V 35A TO262-3
Transistors - FETs, MOSFETs - Single
IPx26CNE8N_Rev1.01.pdf
3,045
3,045 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Base Product Number
IPI26C
Package
Tube
Series
OptiMOS™
FET Type
N-Channel
Drain to Source Voltage (Vdss)
85 V
Rds On (Max) @ Id, Vgs
26mOhm @ 35A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Power Dissipation (Max)
71W (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
FET Feature
-
Mounting Type
Through Hole
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
4V @ 39µA
Input Capacitance (Ciss) (Max) @ Vds
2070 pF @ 40 V
Supplier Device Package
PG-TO262-3
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