IPD10N03LA|Infineon Technologies|Transistors - FETs, MOSFETs - Single

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IPD10N03LA

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IPD10N03LA

Part Number IPD10N03LA

Manufacturer Infineon Technologies

Describe MOSFET N-CH 25V 30A TO252-3

Classification: Transistors - FETs, MOSFETs - Single

Datasheet ipd10n03la_rev1.7_g.pdf

Stock 10,009

Customer Reference

10,009 In Stock

More quantities are on the way.

Product Attributes

Type PARAMETERS

Product Status

Obsolete

Input Capacitance (Ciss) (Max) @ Vds

1358 pF @ 15 V

Mfr

Infineon Technologies

Gate Charge (Qg) (Max) @ Vgs

11 nC @ 5 V

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

10.4mOhm @ 30A, 10V

Vgs (Max)

±20V

Base Product Number

IPD10N

Series

OptiMOS™

Drain to Source Voltage (Vdss)

25 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Supplier Device Package

PG-TO252-3-11

FET Type

N-Channel

Power Dissipation (Max)

52W (Tc)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 20µA

Operating Temperature

-55°C ~ 175°C (TJ)

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

FET Feature

-

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