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  5. IPB65R190CFDATMA2
IPB65R190CFDATMA2
IPB65R190CFDATMA2
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IPB65R190CFDATMA2
IPB65R190CFDATMA2
Infineon Technologies
MOSFET N-CH 650V 17.5A TO263-3
Transistors - FETs, MOSFETs - Single
DS_IPX65R190CFD__2_2.pdf
3,065
3,065 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
Series
CoolMOS™ CFD2
Package
Tape & Reel (TR)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-TO263-3
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Base Product Number
IPB65R190
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 100 V
Drain to Source Voltage (Vdss)
650 V
Vgs(th) (Max) @ Id
4.5V @ 700µA
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