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FQP3N80
FQP3N80
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FQP3N80
FQP3N80
onsemi
MOSFET N-CH 800V 3A TO220-3
Transistors - FETs, MOSFETs - Single
FQP3N80.pdf
TO220B03_Pkg_Dwg.pdf
3,057
3,057 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
5Ohm @ 1.5A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
Package / Case
TO-220-3
FQP3
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
FET Type
N-Channel
Power Dissipation (Max)
107W (Tc)
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Supplier Device Package
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 25 V
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