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FQI2P25TU
FQI2P25TU
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FQI2P25TU
FQI2P25TU
onsemi
MOSFET P-CH 250V 2.3A I2PAK
Transistors - FETs, MOSFETs - Single
FQB2P25,-FQI2P25.pdf
3,015
3,015 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
Power Dissipation (Max)
3.13W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs
4Ohm @ 1.15A, 10V
Series
QFET®
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Vgs (Max)
±30V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 10 V
Base Product Number
FQI2
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)
Vgs(th) (Max) @ Id
5V @ 250µA
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
250 V
Supplier Device Package
I2PAK (TO-262)
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