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  5. FQD2N80TMTR
FQD2N80TMTR
FQD2N80TMTR
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FQD2N80TMTR
FQD2N80TMTR
onsemi
MOSFET N-CH 800V 1.8A DPAK
Transistors - FETs, MOSFETs - Single
fqd2n80-d.pdf
3,086
3,086 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Base Product Number
FQD2N80
FET Feature
-
Mfr
onsemi
FET Type
N-Channel
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.3Ohm @ 900mA, 10V
Series
QFET®
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
Package
Tape & Reel (TR)^^Cut Tape (CT)^^Digi-Reel®
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Technology
MOSFET (Metal Oxide)
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