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  5. FQB8P10TMTR
FQB8P10TMTR
FQB8P10TMTR
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FQB8P10TMTR
FQB8P10TMTR
onsemi
MOSFET P-CH 100V 8A D2PAK
Transistors - FETs, MOSFETs - Single
ONSM-S-A0006944028-1.pdf
3,013
3,013 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Series
QFET®
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Power Dissipation (Max)
3.75W (Ta), 65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Last Time Buy
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Package
Tape & Reel (TR)^^Cut Tape (CT)^^Digi-Reel®
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Base Product Number
FQB8P10
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