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FDC6392STR
FDC6392STR
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FDC6392STR
FDC6392STR
onsemi
MOSFET P-CH 20V 2.2A SUPERSOT6
Transistors - FETs, MOSFETs - Single
FDC6392S.pdf
10,020
10,020 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
FET Type
P-Channel
Power Dissipation (Max)
960mW (Ta)
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 4.5 V
Technology
MOSFET (Metal Oxide)
FET Feature
Schottky Diode (Isolated)
Supplier Device Package
SuperSOT™-6
Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Base Product Number
FDC6392
Package
Tape & Reel (TR)^^Cut Tape (CT)^^Digi-Reel®
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Vgs (Max)
±12V
Product Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
369 pF @ 10 V
Series
PowerTrench®
Rds On (Max) @ Id, Vgs
150mOhm @ 2.2A, 4.5V
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