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  5. CDM22010-650SL
CDM22010-650SL
CDM22010-650SL
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CDM22010-650SL
CDM22010-650SL
Central Semiconductor Corp
MOSFET N-CH 650V 10A TO220
Transistors - FETs, MOSFETs - Single
CDM22010-650.pdf
3,063
3,063 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Package
Tube
Vgs(th) (Max) @ Id
4V @ 250µA
Drain to Source Voltage (Vdss)
650 V
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Series
-
Technology
MOSFET (Metal Oxide)
Vgs (Max)
30V
Power Dissipation (Max)
2W (Ta), 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1168 pF @ 25 V
Mfr
Central Semiconductor Corp
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Supplier Device Package
TO-220-3
Base Product Number
CDM22010
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Package / Case
TO-220-3
Product Status
Active
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1Ohm @ 5A, 10V
FET Feature
-
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