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  5. BSP322PL6327HTSA1TR
BSP322PL6327HTSA1TR
BSP322PL6327HTSA1TR
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BSP322PL6327HTSA1TR
BSP322PL6327HTSA1TR
Infineon Technologies
MOSFET P-CH 100V 1A SOT223-4
Transistors - FETs, MOSFETs - Single
BSP322P.pdf
3,083
3,083 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
800mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Supplier Device Package
PG-SOT223-4-21
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Product Status
Obsolete
Package
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Package / Case
TO-261-4, TO-261AA
Series
SIPMOS®
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
1V @ 380µA
Power Dissipation (Max)
1.8W (Ta)
Input Capacitance (Ciss) (Max) @ Vds
372 pF @ 25 V
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