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  5. 846-R6011ENXC7G
846-R6011ENXC7G
846-R6011ENXC7G
Favorite Products
846-R6011ENXC7G
846-R6011ENXC7G
Rohm Semiconductor
600V 11A TO-220FM, LOW-NOISE POW
Transistors - FETs, MOSFETs - Single
r6011enx-e.pdf
821
821 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Vgs (Max)
±20V
Mounting Type
Through Hole
Series
-
Rds On (Max) @ Id, Vgs
390mOhm @ 3.8A, 10V
Operating Temperature
150°C (TJ)
Vgs(th) (Max) @ Id
4V @ 1mA
Package / Case
TO-220-3 Full Pack
Product Status
Active
FET Feature
-
Power Dissipation (Max)
53W (Tc)
Package
Tube
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-220FM
Mfr
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
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