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2N7000-G
2N7000-G
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2N7000-G
2N7000-G
Microchip Technology
MOSFET N-CH 60V 200MA TO92-3
Transistors - FETs, MOSFETs - Single
2N7000-G.pdf
3,083
3,083 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
60 V
Supplier Device Package
TO-92-3
Base Product Number
2N7000
Current - Continuous Drain (Id) @ 25°C
200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
Vgs (Max)
±30V
Power Dissipation (Max)
1W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Microchip Technology
Product Status
Active
Vgs(th) (Max) @ Id
3V @ 1mA
FET Feature
-
Series
-
Package
Bag
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